000 01082cam a2200301 a 4500
001 3470762
003 KE-NaKCAU
005 20140407120812.0
008 931007s1994 nyua b 001 0 eng
010 _a 93040716
020 _a9814126942
040 _aDLC
_cKE-NaKCAU
_dDLC
050 0 0 _aTK7874
_b.G473 1994
082 0 0 _a621.3815/2
_220
100 1 _aGhandhi, Sorab K.
_d1928-
_99566
245 1 0 _aVLSI fabrication principles :
_bsilicon and gallium arsenide /
_cSorab K. Ghandhi.
250 _a2nd ed.
260 _aNew York :
_bWiley,
_cc1994.
300 _axxiv, 834 p. :
_bill. ;
_c25 cm.
504 _aIncludes bibliographical references and index.
650 0 _aIntegrated circuits
_xVery large scale integration.
_99567
650 0 _aSilicon.
_99568
650 0 _aGallium arsenide.
_99569
740 0 _aVery large scale integration fabrication principles.
906 _a7
_bcbc
_corignew
_d1
_eocip
_f19
_gy-gencatlg
942 _2lcc
_cBK
999 _c6233
_d6233